Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1A Pmax 2W

Found: 299
  • TRANS NPN 45V 1A SOT223
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS PNP 100V 1A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
    • Current - Collector Cutoff (Max): 200µA
    • Frequency - Transition: 3MHz
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  • TRANS PNP 45V 1A SOT89
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PG-SOT89
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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  • TRANS NPN 50V 1A MPT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: MPT3
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
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  • TRANS NPN 80V 1A MPT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: MPT3
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS PNP 100V 1A TO220
    Bourns Inc.
    • Manufacturer: Bourns Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
    • Current - Collector Cutoff (Max): 300µA
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  • TRANS PNP 45V 1A SOT89
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PG-SOT89
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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  • TRANS NPN 230V 1A TO220NIS
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220NIS
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS PNP 230V 1A TO220NIS
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220NIS
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 70MHz
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  • TRANS PNP 230V 1A TO220NIS
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220NIS
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 70MHz
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  • TRANS PNP 230V 1A TO220NIS
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220NIS
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 70MHz
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  • TRANS PNP 20V 1A SOT223-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223-3
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS PNP 80V 1A SOT89
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PG-SOT89
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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  • SMALL SIGNAL BIPOLAR TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PG-SOT89
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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  • PWR MID PERF TRANSISTOR SOT223 T
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223-3
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
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