Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1A Pmax 2W
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 200µA
- Frequency - Transition: 3MHz
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- Manufacturer: Infineon Technologies
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 125MHz
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 100MHz
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 300µA
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 125MHz
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 100MHz
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 70MHz
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 70MHz
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 70MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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- Manufacturer: Infineon Technologies
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 125MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 125MHz
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- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
- Power - Max: 2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
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- Offers in stock:
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- 100