Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 10A Pmax 2W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 96
  • BDX34A-S
    TRANS PNP DARL 60V 10A TO220
    Bourns Inc.
    • Manufacturer: Bourns Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 4A
    • Current - Collector Cutoff (Max): 500µA
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  • 2N6388G
    TRANS NPN DARL 80V 10A TO220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
    • Current - Collector Cutoff (Max): 1mA
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  • 2N6387G
    TRANS NPN DARL 60V 10A TO220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
    • Current - Collector Cutoff (Max): 1mA
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  • 2N6387
    TRANS NPN DARL 60V 10A TO220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
    • Current - Collector Cutoff (Max): 1mA
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  • 2N6388
    TRANS NPN DARL 80V 10A TO220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
    • Current - Collector Cutoff (Max): 1mA
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  • 2SB09480P
    TRANS PNP 20V 10A TO220F-A1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220F-A1
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 3A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 330mA, 10A
    • Current - Collector Cutoff (Max): 50µA (ICBO)
    • Frequency - Transition: 100MHz
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  • D44H8
    TRANS NPN 60V 10A TO220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
    • Current - Collector Cutoff (Max): 10µA
    • Frequency - Transition: 50MHz
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  • D45H11G
    TRANS PNP 80V 10A TO220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
    • Current - Collector Cutoff (Max): 10µA
    • Frequency - Transition: 40MHz
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  • JAN2N3997
    TRANS NPN 80V 10A TO111
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/374
    • Mounting Type: Stud Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-111-4, Stud
    • Supplier Device Package: TO-111
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA
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  • JANTX2N3999
    TRANS NPN 80V 10A TO59
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/374
    • Mounting Type: Chassis, Stud Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-210AA, TO-59-4, Stud
    • Supplier Device Package: TO-59
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA
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  • 2N6667G
    TRANS PNP DARL 60V 10A TO220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 2W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
    • Current - Collector Cutoff (Max): 1mA
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  • 2SA1887(F)
    TRANS PNP 50V 10A TO220NIS
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220NIS
    • Power - Max: 2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 45MHz
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  • D44H8
    TRANS NPN 60V 10A TO220AB
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
    • Current - Collector Cutoff (Max): 10µA
    • Frequency - Transition: 50MHz
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  • JAN2N3996
    TRANS NPN 80V 10A TO111
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/374
    • Mounting Type: Chassis, Stud Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-111-4, Stud
    • Supplier Device Package: TO-111
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA
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  • NJVMJB44H11T4G
    TRANS NPN 80V 10A D2PAK
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK
    • Power - Max: 2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
    • Current - Collector Cutoff (Max): 10µA
    • Frequency - Transition: 50MHz
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