Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 100mA Pmax 280mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 9
  • BC857BQAZ
    TRANS PNP 45V 0.1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
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  • BC857CQAZ
    TRANS PNP 45V 0.1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
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  • BC847AQAZ
    TRANS NPN 45V 0.1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
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    • Offers in stock:
  • BC847BQAZ
    TRANS NPN 45V 0.1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
    • Total warehouses:
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    • Offers in stock:
  • BC857AQAZ
    NOW NEXPERIA BC857AQA SMALL SIGN
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
    • Total warehouses:
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    • Offers in stock:
  • BC847CQAZ
    TRANS NPN 45V 0.1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
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    • Offers in stock:
  • BC847BQAZ
    NOW NEXPERIA BC847BQA - SMALL SI
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
    • Total warehouses:
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    • Offers in stock:
  • BC857AQAZ
    NEXPERIA BC857AQA SMALL SIGNAL B
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
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  • BC857BQAZ
    NEXPERIA BC857 - 45 V, 100 MA PN
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 280mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 100MHz
    Info from the market
    • Total warehouses:
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    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100