Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 100mA Pmax 230mW
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: NXP USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
- Power - Max: 230mW
- Transistor Type: NPN, PNP Complementary
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- Frequency - Transition: 100MHz
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