Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 150mA Pmax 200mW, 210mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 1
  • HN1B01FU-GR,LF
    TRANS NPN/PNP 50V 0.15A US6-PLN
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: US6
    • Power - Max: 200mW, 210mW
    • Transistor Type: NPN, PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100