Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 200mA Pmax 1W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 87
  • JAN2N5014S
    TRANS NPN 900V 0.2A TO39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/727
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
    • Current - Collector Cutoff (Max): 10nA (ICBO)
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  • 2N5012
    TRANS NPN 700V 0.2A TO5
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AA, TO-5-3 Metal Can
    • Supplier Device Package: TO-5
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 700V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
    • Current - Collector Cutoff (Max): 10nA (ICBO)
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  • JANTX2N4931
    TRANS PNP 250V 0.2A TO-39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/397
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
    • Current - Collector Cutoff (Max): 250nA (ICBO)
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  • 2N5015
    TRANS NPN 1000V 0.2A TO5
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AA, TO-5-3 Metal Can
    • Supplier Device Package: TO-5
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 1000V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
    • Current - Collector Cutoff (Max): 10nA (ICBO)
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  • DXT3904-13
    TRANS NPN 40V 0.2A SOT89-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89-3
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
    • Frequency - Transition: 300MHz
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  • JANTXV2N5012S
    TRANS NPN 700V 0.2A TO39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/727
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 700V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
    • Current - Collector Cutoff (Max): 10nA (ICBO)
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  • JAN2N3743U4
    TRANS PNP 300V 0.2A U4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/397
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: U4
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
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  • JAN2N4930U4
    TRANS PNP 200V 0.2A U4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/397
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: U4
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
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  • ZTX558W
    TRANS PNP 400V 0.2A E-LINE
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 200°C (TJ)
    • Package / Case: E-Line-3
    • Supplier Device Package: E-Line (TO-92 compatible)
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 50MHz
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  • JANTX2N3743
    TRANS PNP 300V 0.2A TO-39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/397
    • Mounting Type: Through Hole
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
    • Current - Collector Cutoff (Max): 250nA (ICBO)
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  • JAN2N4931
    TRANS PNP 250V 0.2A TO39
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/397
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
    • Current - Collector Cutoff (Max): 250nA (ICBO)
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  • MMPQ3904 TR13
    TRANSISTOR NPN QUAD SMD
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 16-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 16-SOIC
    • Power - Max: 1W
    • Transistor Type: 4 NPN (Quad)
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
    • Frequency - Transition: 450MHz
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  • 2N5014
    TRANS NPN 900V 0.2A TO5
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AA, TO-5-3 Metal Can
    • Supplier Device Package: TO-5
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
    • Current - Collector Cutoff (Max): 10nA (ICBO)
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  • JANTX2N5015S
    TRANS NPN 1000V 0.2A TO39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/727
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 1000V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
    • Current - Collector Cutoff (Max): 10nA (ICBO)
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  • JANTX2N3743U4
    TRANS PNP 300V 0.2A U4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/397
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: U4
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
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