Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 100µA Pmax 1W

Found: 4
  • TRANS NPN 100V 100UA U-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-276AA
    • Supplier Device Package: U-3 (TO-276AA)
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100µA
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA
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  • TRANS NPN 100V 100UA TO39
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/560
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100µA
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA
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  • TRANS NPN 100V 100UA U-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/560
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-276AA
    • Supplier Device Package: U-3 (TO-276AA)
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100µA
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA
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  • TRANS NPN 100V 100UA U-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/560
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-276AA
    • Supplier Device Package: U-3 (TO-276AA)
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100µA
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA
    Info from the market
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    • Total offers:
    • Offers with a price:
    • Offers in stock: