Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 15A Pmax 150W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 39
  • TTA1943(Q)
    TRANS PNP 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3PL
    • Supplier Device Package: TO-3P(L)
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • 2SC3857
    TRANS NPN 200V 15A MT-200
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-ESIP
    • Supplier Device Package: MT-200
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 20MHz
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  • MJH11020G
    TRANS NPN DARL 200V 15A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 3MHz
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  • BUH150G
    TRANS NPN 700V 15A TO220
    onsemi
    • Manufacturer: onsemi
    • Series: SWITCHMODE™
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 700V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
    • Current - Collector Cutoff (Max): 100µA
    • Frequency - Transition: 23MHz
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  • TTC5200(Q)
    TRANS NPN 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3PL
    • Supplier Device Package: TO-3P(L)
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • BUH150
    TRANS NPN 700V 15A TO220
    onsemi
    • Manufacturer: onsemi
    • Series: SWITCHMODE™
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 700V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
    • Current - Collector Cutoff (Max): 100µA
    • Frequency - Transition: 23MHz
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  • 2SA1943N(S1,E,S)
    TRANS PNP 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P(N)
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • 2SC2921
    TRANS NPN 160V 15A MT-200
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-ESIP
    • Supplier Device Package: MT-200
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 60MHz
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  • 2SA1215
    TRANS PNP 160V 15A MT-200
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-ESIP
    • Supplier Device Package: MT-200
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 50MHz
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  • MJH11022G
    TRANS NPN DARL 250V 15A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 3MHz
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  • MJW0302AG
    POWER BIPOLAR TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • BUB941ZT
    TRANS NPN DARL 350V 15A D2PAK
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Surface Mount
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 350V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
    • Current - Collector Cutoff (Max): 100µA
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  • MJH11019
    TRANS PNP DARL 200V 15A SOT93
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: SOT-93
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 3MHz
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  • BUB941ZTT4
    TRANS NPN DARL 350V 15A D2PAK
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: Automotive
    • Mounting Type: Surface Mount
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 350V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
    • Current - Collector Cutoff (Max): 100µA
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  • MJW0302A
    POWER BIPOLAR TRANSISTOR, PNP
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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