Transistors - Bipolar (BJT) - Single Pmax 10W | Transistors

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Found: 88

2SB1181TLR

TRANS PNP 80V 1A CPT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: CPT3
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 100MHz
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2SC5001TLR

TRANS NPN 20V 10A CPT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: CPT3
- Power - Max: 10W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 150MHz
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2SCR543DTL

TRANS NPN 50V 4A CPT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: CPT3
- Power - Max: 10W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 300MHz
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2SA1869-Y,MTSAQ(J

TRANS PNP 50V 3A TO220NIS

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 100MHz
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TSB772CK C0G

TRANS PNP 30V 3A TO126

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 80MHz
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KSA1242YTU

TRANS PNP 20V 5A IPAK

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-PAK
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 180MHz
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2SCR572D3FRATL

TRANS NPN 30V 5A TO252

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Power - Max: 10W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 300MHz
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2SCR586D3TL1

TRANS NPN 80V 5A TO252

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Power - Max: 10W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 200MHz
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TTA004B,Q

TRANS PNP 160V 1.5A TO126N

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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2SAR574D3FRATL

TRANS PNP 80V 2A TO252

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Power - Max: 10W
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
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2DB1182Q-13

TRANS PNP 32V 2A TO252-3

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 110MHz
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2SB1182TLR

TRANS PNP 32V 2A CPT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: CPT3
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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2SA0963

TRANS PNP 40V 1.5A TO126A-A1

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126A-A1
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 150MHz
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