Found: 88
  • T-NPN SI- SWITCH
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39
    • Power - Max: 10W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 2A
    • Voltage - Collector Emitter Breakdown (Max): 75V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
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  • TRANS NPN 30V 5A TO252
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Power - Max: 10W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 300MHz
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  • TRANS PNP 80V 5A TO252
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Power - Max: 10W
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
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  • TRANS PNP 80V 3A PW-MOLD
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PW-MOLD
    • Power - Max: 10W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS NPN 50V 3A TO252
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Power - Max: 10W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 320MHz
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  • TRANS PNP 30V 3A TO126
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 10W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 80MHz
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  • TRANS NPN 80V 1A CPT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: CPT3
    • Power - Max: 10W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS PNP 40V 1.5A U-G2
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: U-G2
    • Power - Max: 10W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
    • Current - Collector Cutoff (Max): 100µA
    • Frequency - Transition: 150MHz
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  • TRANS PNP 30V 3A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 10W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS NPN 30V 3A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 10W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 100MHz
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  • PNP, TO-252 (DPAK), -50V -7A, PO
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Power - Max: 10W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 7A
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 230MHz
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  • TRANS PNP 75V 2A TO5
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: TO-205AA, TO-5-3 Metal Can
    • Supplier Device Package: TO-5
    • Power - Max: 10W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 2A
    • Voltage - Collector Emitter Breakdown (Max): 75V
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  • TRANS NPN 30V 3A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 10W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS PNP DARL 100V 2A CPT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: CPT3
    • Power - Max: 10W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 2A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 50MHz
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  • TRANS PNP 30V 3A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 10W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 100MHz
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