Transistors - Bipolar (BJT) - Single Pmax 100mW | Transistors

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Found: 108

2SC1923-R-AP

TRANS NPN 30V 0.02A TO92

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 500MHz
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FJZ945YTF

TRANS NPN 50V 0.15A SOT623F

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-623F
- Supplier Device Package: SOT-623F
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 300MHz
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2SC5946G0L

TRANS NPN 20V 0.05A SSSMINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 10V
- Frequency - Transition: 1.6GHz
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2SC6026CT-GR,L3F

TRANS NPN 50V 0.1A CST3

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 60MHz
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2SA216300A

TRANS PNP 20V 0.03A ML3-N2

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: ML3-N2
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 300MHz
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2SC4116SU-Y,LF

TRANS NPN 50V 0.15A SC70

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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2SA2154CT-GR,L3F

TRANS PNP 50V 0.1A CST3

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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2SA1587-GR,LF

TRANS PNP 120V 0.1A SC70

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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2SA1588-GR,LF

TRANS PNP 30V 0.5A SC70

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
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2SC4116-GR-TP

TRANS NPN 60V 0.15A SOT323

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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KTA2014-GR-TP

TRANS PNP 50V 0.15A SOT323

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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2SA207900A

TRANS PNP 45V 0.1A ML3-N2

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: ML3-N2
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 80MHz
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2SC584800A

TRANS NPN 50V 0.1A ML3-N2

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: ML3-N2
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 100MHz
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2SC5233BTE85LF

TRANS NPN 12V 0.5A USM

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130MHz
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FJZ945GTF

TRANS NPN 50V 0.15A SOT623F

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-623F
- Supplier Device Package: SOT-623F
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 300MHz
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