Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1A Pmax 1.8W

Found: 10
  • TRANS PNP 80V 1A SOT223
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.8W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS NPN 80V 1A SOT223
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • THROUGH-HOLE TRANSISTOR-SMALL SI
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 10nA (ICBO)
    • Frequency - Transition: 80MHz
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  • BJTS
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 90V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA
    • Current - Collector Cutoff (Max): 10nA (ICBO)
    • Frequency - Transition: 120MHz
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  • TRANS NPN 80V 1A TO18
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 10nA (ICBO)
    • Frequency - Transition: 100MHz
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  • BCP53T/SOT223/SC-73
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.8W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS NPN 90V 1A TO18
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 90V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA
    • Current - Collector Cutoff (Max): 10nA (ICBO)
    • Frequency - Transition: 120MHz
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  • TRANS NPN 80V 1A SOT223
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS NPN 80V 1A SOT223
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS NPN 80V 1A SOT223
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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