Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.5A Pmax 1.6W

Found: 7
  • TRANS NPN 30V 1.5A VS-6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: U-MOSVII
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: VS-6 (2.9x2.8)
    • Power - Max: 1.6W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • TRANS NPN 400V 1.5A SOT223
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.6W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN 80V 1.5A SOT223
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Surface Mount
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.6W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 50MHz
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  • TRANS NPN 450V 1.5A TO252-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252-3
    • Power - Max: 1.6W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
    • Frequency - Transition: 4MHz
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  • TRANS PNP 400V 1.5A SOT223
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.6W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP 80V 1.5A SOT223
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.6W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 50MHz
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  • TRANS NPN 460V 1.5A TO252-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252-3
    • Power - Max: 1.6W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 460V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
    • Frequency - Transition: 4MHz
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