Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 10A Pmax 1.67W
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 40MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 1.67W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 10A
- Current - Collector Cutoff (Max): 10µA
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 40MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 50MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 40MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 1.67W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 135MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 1.67W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 10A
- Current - Collector Cutoff (Max): 10µA
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 40MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 50MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 40MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100