- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 90W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- Frequency - Transition: 2.5MHz
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 3.5W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 10A
- Current - Collector Cutoff (Max): 700µA
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.8W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 5MHz
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- Manufacturer: STMicroelectronics
- Series: Automotive
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
- Power - Max: 200W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 260V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
- Current - Collector Cutoff (Max): 50µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 200W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 10A
- Current - Collector Cutoff (Max): 50µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 180W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 90W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- Frequency - Transition: 2.5MHz
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 130W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: STMicroelectronics
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 135W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 3.5W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 10A
- Current - Collector Cutoff (Max): 700µA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 260V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-218-3 Isolated Tab, TO-218AC
- Supplier Device Package: TO-218 Isolated
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 15A
- Current - Collector Cutoff (Max): 3mA
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 130W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 85W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 10A
- Current - Collector Cutoff (Max): 2mA
- Frequency - Transition: 4MHz
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- Offers in stock:
- 10
- 15
- 50
- 100