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List Table
Found: 535
  • HN1C01FU-Y,LXHF
    AUTO AEC-Q NPN + NPN TR VCEO:50V
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: US6
    • Power - Max: 200mW
    • Transistor Type: 2 NPN (Dual)
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • KSA733GBU
    TRANS PNP 50V 0.15A TO92-3
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 250mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 180MHz
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  • 2SA1832-Y,LF
    TRANS PNP 50V 0.15A SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • HN1A01FE-Y,LF
    TRANS 2PNP 50V 0.15A ES6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: ES6
    • Power - Max: 100mW
    • Transistor Type: 2 PNP (Dual)
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2SC4116-Y-TP
    TRANS NPN 60V 0.15A SOT323
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SOT-323
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • HN1C01FU-Y(T5L,F,T
    TRANS 2NPN 50V 0.15A US6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: US6
    • Power - Max: 200mW
    • Transistor Type: 2 NPN (Dual)
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2SA1586SU-Y,LF
    TRANS PNP 50V 0.15A SC70
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2SC536NF-NPA-AT
    SMALL SIGNAL BIPOLAR TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-226AA
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
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  • HN1C01FE-GR,LXHF
    AUTO AEC-Q NPN + NPN TR VCEO:50V
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: ES6
    • Power - Max: 100mW
    • Transistor Type: 2 NPN (Dual)
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • KSC945YTA
    TRANS NPN 50V 0.15A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 250mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 300MHz
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  • ZXTP01500BGTC
    TRANS PNP 500V 0.15A SOT223-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223-3
    • Power - Max: 3W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 500V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 60MHz
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  • HN2A01FE-GR(TE85LF
    TRANS 2PNP 50V 0.15A ES6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: ES6
    • Power - Max: 100mW
    • Transistor Type: 2 PNP (Dual)
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 800MHz
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  • KSA733CYBU
    TRANS PNP 50V 0.15A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 250mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 180MHz
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  • HN2A01FE-Y(TE85L,F
    TRANS 2PNP 50V 0.15A ES6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: ES6
    • Power - Max: 100mW
    • Transistor Type: 2 PNP (Dual)
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2SA1832-Y-AP
    TRANS PNP 50V 0.15A SOT523
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SOT-523
    • Supplier Device Package: SOT-523
    • Power - Max: 100mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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