• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN
• Power - Max: 90W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 500V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 800mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 18MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• Power - Max: 2W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (Max): 10µA
• Frequency - Transition: 50MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• Power - Max: 2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (Max): 10µA
• Frequency - Transition: 40MHz

• Manufacturer: NXP Semiconductors
• Mounting Type: Surface Mount
• Operating Temperature: 175°C (TJ)
• Package / Case: SC-100, SOT-669
• Supplier Device Package: LFPAK56, Power-SO8
• Power - Max: 1.5W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 470mV @ 1A, 10A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 85MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220ML
• Power - Max: 25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 270mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 6A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 230MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: I-PAK
• Power - Max: 1.75W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 50µA
• Frequency - Transition: 2MHz

• Manufacturer: MACOM Technology Solutions
• Series: Military, MIL-PRF-19500/408
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204AA (TO-3)
• Power - Max: 5W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Power - Max: 1.75W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 50µA
• Frequency - Transition: 2MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Power - Max: 1.75W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 50µA
• Frequency - Transition: 2MHz

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/374
• Mounting Type: Stud Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-111-4, Stud
• Supplier Device Package: TO-111
• Power - Max: 2W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/374
• Mounting Type: Chassis, Stud Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-210AA, TO-59-4, Stud
• Supplier Device Package: TO-59
• Power - Max: 2W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Power - Max: 125W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
• Current - Collector Cutoff (Max): 2mA

• Manufacturer: Harris Corporation
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 175°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3
• Power - Max: 150W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 350V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 6A, 3V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 6A
• Current - Collector Cutoff (Max): 1mA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF
• Power - Max: 60W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 750V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
• Current - Collector Cutoff (Max): 1mA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Power - Max: 70W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
• Current - Collector Cutoff (Max): 500µA