Transistors - Bipolar (BJT) - Single IC(MAX) 10A | Transistors

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Found: 560

2N6667

TRANS PNP DARL 60V 10A TO220

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 2W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
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KSE3055T

SMALL SIGNAL BIPOLAR TRANSISTOR

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 600mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- Frequency - Transition: 2MHz
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TIP141

TRANS NPN DARL 80V 10A TO218

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
- Current - Collector Cutoff (Max): 2mA
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MJB44H11T4-A

TRANS NPN 80V 10A D2PAK

STMicroelectronics
- Manufacturer: STMicroelectronics
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
- Power - Max: 50W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
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MJ16018

SILICON TRANSISTOR NPN

Solid State Inc.
- Manufacturer: Solid State Inc.
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 175W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 750V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 10A
- Current - Collector Cutoff (Max): 250µA
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BUV26

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 85W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 90V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A
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JAN2N3716

TRANS NPN 80V 10A TO-3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/408
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
- Power - Max: 5W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
- Current - Collector Cutoff (Max): 1mA
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JANTX2N3998

TRANS NPN 80V 10A TO59

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/374
- Mounting Type: Chassis, Stud Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
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NJVBUB323ZT4G

TRANS NPN DARL 350V 10A D2PAK

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 2MHz
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D44H11TU

TRANS NPN 80V 10A TO220-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 60W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 50MHz
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BD245-S

TRANS NPN 45V 10A SOT93

Bourns Inc.
- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 3W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
- Current - Collector Cutoff (Max): 700µA
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BDX34B

POWER BIPOLAR TRANSISTOR, PNP

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 70W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 500µA
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2N6099 PBFREE

TRANS NPN 60V 10A TO220-3

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 75W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: 5MHz
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JANTXV2N6650

TRANS PNP DARL 80V 10A TO204AA

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/527
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 5W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA (ICBO)
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JANTX2N4150

TRANS NPN 70V 10A TO5

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/394
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
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