Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 100mA, 500mA package SOT-363
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- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
- Power - Max: 300mW
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 280MHz
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
- Power - Max: 200mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Resistor - Base (R1): 100Ohms, 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100