Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 100mA package SC-70

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 79
  • RN2303,LF
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • RN2301,LF
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • RN2306,LF
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • GA1A4Z-T1-A
    GA1A4Z - SWITCHING REGISTER BUI
    Renesas
    • Manufacturer: Renesas
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA
    • Resistor - Base (R1): 10kOhms
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  • RN1306,LXHF
    AUTO AEC-Q SINGLE NPN , R1=4.7KO
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • RN2308,LF
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • RN2309(TE85L,F)
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • RN2311(TE85L,F)
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
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  • RN1305,LXHF
    AUTO AEC-Q SINGLE NPN , R1=2.2KO
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • RN1303,LF
    TRANS PREBIAS NPN 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • RN2313(TE85L,F)
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 47kOhms
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  • RN1313,LXHF
    AUTO AEC-Q NPN BRT IC:0.1A, VCEO
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 47kOhms
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  • RN2301,LXHF
    AUTO AEC-Q SINGLE PNP , R1=4.7KO
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PDTA114EU/SNF
    TRANS PREBIAS PNP SC70
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • RN1310,LF
    TRANS PREBIAS NPN 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 4.7kOhms
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