Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 800mA package S-Mini

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 14
  • RN2426(TE85L,F)
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • RN2424(TE85L,F)
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • RN2425(TE85L,F)
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • RN1424TE85LF
    TRANS PREBIAS NPN 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 300MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • RN2427TE85LF
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • RN1425TE85LF
    TRANS PREBIAS NPN 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 300MHz
    • Resistor - Base (R1): 470Ohms
    • Resistor - Emitter Base (R2): 10kOhms
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  • RN1423TE85LF
    TRANS PREBIAS NPN 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 300MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • RN1422TE85LF
    TRANS PREBIAS NPN 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 300MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
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  • RN2422TE85LF
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
    Info from the market
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  • RN1427TE85LF
    TRANS PREBIAS NPN 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 300MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • RN1421TE85LF
    TRANS PREBIAS NPN 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 300MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
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  • RN2421(TE85L,F)
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
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  • RN2423(TE85L,F)
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
    Info from the market
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    • Offers in stock:
  • RN1426TE85LF
    TRANS PREBIAS NPN 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 300MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • 50
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