• Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 6
Partnumber Description Manufacturer
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Transistor Type
Supplier Device Package
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Resistor - Emitter Base (R2)
Package / Case
FJNS4202RTA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92S 10kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 200MHz 10kOhms TO-226-3, TO-92-3 Short Body
FJNS3215RBU SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92S 2.2kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 33 @ 10mA, 5V 250MHz 10kOhms TO-226-3, TO-92-3 Short Body
FJNS3202RTA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92S 10kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 250MHz 10kOhms TO-226-3, TO-92-3 Short Body
FJNS3201RTA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92S 4.7kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 20 @ 10mA, 5V 250MHz 4.7kOhms TO-226-3, TO-92-3 Short Body
FJNS4206RTA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92S 10kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 68 @ 5mA, 5V 200MHz 47kOhms TO-226-3, TO-92-3 Short Body
FJNS3206RTA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92S 10kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 68 @ 5mA, 5V 250MHz 47kOhms TO-226-3, TO-92-3 Short Body
  • 10
  • 15
  • 50
  • 100