-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
Partnumber | Description | Manufacturer
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Supplier Device Package
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Resistor - Emitter Base (R2)
|
Package / Case
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FJN4314RBU | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 50V | 300mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 4.7kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 68 @ 5mA, 5V | 200MHz | 47kOhms | TO-226-3, TO-92-3 (TO-226AA) |
FJN4310RTA | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 40V | 300mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 10kOhms | 300mV @ 1mA, 10mA | 100nA (ICBO) | 100 @ 1mA, 5V | 200MHz | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
FJN3310RBU | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 40V | 300mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 10kOhms | 300mV @ 1mA, 10mA | 100nA (ICBO) | 100 @ 1mA, 5V | 250MHz | TO-226-3, TO-92-3 (TO-226AA) | |
FJN3306RTA | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 50V | 300mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 68 @ 5mA, 5V | 250MHz | 47kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
FJN4303RBU | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 50V | 300mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 22kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 56 @ 5mA, 5V | 200MHz | 22kOhms | TO-226-3, TO-92-3 (TO-226AA) |
FJN3304RTA | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 50V | 300mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 47kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 68 @ 5mA, 5V | 250MHz | 47kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
FJN3304RBU | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 50V | 300mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 47kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 68 @ 5mA, 5V | 250MHz | 47kOhms | TO-226-3, TO-92-3 (TO-226AA) |
FJN4310RBU | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 40V | 300mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 10kOhms | 300mV @ 1mA, 10mA | 100nA (ICBO) | 100 @ 1mA, 5V | 200MHz | TO-226-3, TO-92-3 (TO-226AA) | |
FJN3310RTA | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 40V | 300mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 10kOhms | 300mV @ 1mA, 10mA | 100nA (ICBO) | 100 @ 1mA, 5V | 250MHz | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
FJN3309RTA | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | 100mA | 40V | 300mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 4.7kOhms | 300mV @ 1mA, 10mA | 100nA (ICBO) | 100 @ 1mA, 5V | 250MHz | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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