Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased Panasonic Electronic Components IC(MAX) 500mA

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 30
  • DMG264120R
    TRANS NPN/PNP PREBIAS 0.3W MINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6
    • Supplier Device Package: Mini6-G4-B
    • Power - Max: 300mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • UNR412300A
    TRANS PREBIAS PNP 300MW NS-B1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Package / Case: 3-SSIP
    • Supplier Device Package: NS-A1
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR222200L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • UNR422200A
    TRANS PREBIAS NPN 300MW NS-B1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Package / Case: 3-SIP
    • Supplier Device Package: NS-B1
    • Power - Max: 300mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • DRC2523E0L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G3-B
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
    Info from the market
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  • UNR412200A
    TRANS PREBIAS PNP 300MW NS-B1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Package / Case: 3-SSIP
    • Supplier Device Package: NS-A1
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • DRA2533Q0L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G3-B
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 3.1 kOhms
    • Resistor - Emitter Base (R2): 4.6 kOhms
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  • UNR212400L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR412400A
    TRANS PREBIAS PNP 300MW NS-B1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Package / Case: 3-SSIP
    • Supplier Device Package: NS-A1
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DRA2522J0L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G3-B
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 270Ohms
    • Resistor - Emitter Base (R2): 5 kOhms
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  • DRA2523Y0L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G3-B
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR222300L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR212100L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
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  • UNR412100A
    TRANS PREBIAS PNP 300MW NS-B1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Package / Case: 3-SSIP
    • Supplier Device Package: NS-A1
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
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  • XN0413000L
    TRANS PREBIAS DUAL PNP MINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6
    • Supplier Device Package: MINI6-G1
    • Power - Max: 300mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 300mA
    • Frequency - Transition: 130MHz
    • Resistor - Base (R1): 10kOhms
    Info from the market
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