Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased NXP USA Inc. I_C(MAX) 20mA

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List Table

Found: 8

PDTA115EMB,315

NOW NEXPERIA PDTA115EMB - SMALL

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180MHz
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTA115EK,115

TRANS PREBIAS PNP 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115EEF,115

TRANS PREBIAS NPN 250MW SC89

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SC-89
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115ES,126

TRANS PREBIAS NPN 500MW TO92-3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 500mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTA115ES,126

TRANS PREBIAS PNP 500MW TO92-3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 500mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTA115EE,115

TRANS PREBIAS PNP 150MW SC75

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115EE,115

TRANS PREBIAS NPN 150MW SC75

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115EK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased NXP USA Inc. IC(MAX) 20mA

Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased NXP USA Inc. I_C(MAX) 20mA