- Current - Collector (Ic) (Max)
- Manufacturer
- Voltage - Collector Emitter Breakdown (Max)
- Transistor Type
- Supplier Device Package
-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
| Partnumber | Description | Manufacturer
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Supplier Device Package
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Resistor - Emitter Base (R2)
|
Package / Case
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMBTRA226S | DIGITAL TR SOT-23 50V 800MA | Diotec Semiconductor | 800mA | 200mW | Surface Mount | PNP - Pre-Biased | SOT-23-3 (TO-236) | 2.2kOhms | 10µA | 56 @ 50mA, 5V | 200MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 | ||
| PBRN123YS,126 | TRANS PREBIAS NPN 0.7W TO92-3 | NXP USA Inc. | 800mA | 40V | 700mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 2.2kOhms | 1.15V @ 8mA, 800mA | 500nA | 500 @ 300mA, 5V | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| PBRN113ZS,126 | TRANS PREBIAS NPN 0.7W TO92-3 | NXP USA Inc. | 800mA | 40V | 700mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 1kOhms | 1.15V @ 8mA, 800mA | 500nA | 500 @ 300mA, 5V | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| PBRP113ES,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 800mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 1kOhms | 1kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | ||||
| PBRN123ES,126 | TRANS PREBIAS NPN 0.7W TO92-3 | NXP USA Inc. | 800mA | 40V | 700mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 2.2kOhms | 1.15V @ 8mA, 800mA | 500nA | 280 @ 300mA, 5V | 2.2kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| RN1426TE85LF | TRANS PREBIAS NPN 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 1kOhms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 300MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
| RN2421(TE85L,F) | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 1kOhms | 250mV @ 2mA, 50mA | 500nA | 60 @ 100mA, 1V | 200MHz | 1kOhms | TO-236-3, SC-59, SOT-23-3 |
| RN2423(TE85L,F) | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 4.7kOhms | 250mV @ 1mA, 50mA | 500nA | 70 @ 100mA, 1V | 200MHz | 4.7kOhms | TO-236-3, SC-59, SOT-23-3 |
| RN1421TE85LF | TRANS PREBIAS NPN 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 1kOhms | 250mV @ 2mA, 50mA | 500nA | 60 @ 100mA, 1V | 300MHz | 1kOhms | TO-236-3, SC-59, SOT-23-3 |
- 10
- 15
- 50
- 100