Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 600mA

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 43
  • PBRN113ET,215
    TRANS PREBIAS NPN 250MW TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
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  • DRDNB26W-7
    TRANS PREBIAS NPN/DIODE SOT363
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 220Ohms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PBRP113ET,215
    TRANS PREBIAS PNP 250MW TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
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  • DTC343TKT146
    TRANS PREBIAS NPN 200MW SMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
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  • UNR222600L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
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  • DTC314TKT146
    TRANS PREBIAS NPN 200MW SMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
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  • DTC614TUT106
    TRANS PREBIAS NPN 200MW UMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: UMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
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  • DTC314TUT106
    TRANS PREBIAS NPN 200MW UMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: UMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
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  • DRDNB16W-7
    TRANS PREBIAS NPN/DIODE SOT363
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTC643TUT106
    TRANS PREBIAS NPN 200MW UMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: UMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 4.7kOhms
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  • XN0F26300L
    TRANS PREBIAS DUAL NPN MINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6
    • Supplier Device Package: MINI6-G1
    • Power - Max: 300mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 50mV @ 2.5mA, 50mA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 270Ohms
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  • DRDPB16W-7
    TRANS PREBIAS PNP 0.2W SOT363
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTC623TUT106
    TRANS PREBIAS NPN 200MW UMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: UMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 2.2kOhms
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  • DTC363EKT146
    TRANS PREBIAS NPN 200MW SMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 6.8 kOhms
    • Resistor - Emitter Base (R2): 6.8 kOhms
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  • DTC323TUT106
    TRANS PREBIAS NPN 200MW UMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: UMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
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