Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 600mA | Transistors

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Found: 43

IMH23T110

TRANS PREBIAS DUAL NPN SMT6

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
- Power - Max: 300mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 4.7kOhms
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PBRP113ZT,215

TRANS PREBIAS PNP 40V TO236AB

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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XN0F26100L

TRANS PREBIAS DUAL NPN MINI6

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: MINI6-G1
- Power - Max: 300mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 3.3kOhms
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PBRN113ZT,215

TRANS PREBIAS NPN 250MW TO236AB

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PBRN113ZK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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DRDPB26W-7

TRANS PREBIAS PNP 0.2W SOT363

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 220Ohms
- Resistor - Emitter Base (R2): 4.7kOhms
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PBRP123ET,215

TRANS PREBIAS PNP 40V TO236AB

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
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DRC2614T0L

TRANS PREBIAS NPN 200MW MINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Resistor - Base (R1): 10kOhms
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PBRN123ET,215

TRANS PREBIAS NPN 40V TO236AB

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
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IMH20TR1

TRANS 2NPN PREBIAS 0.3W SC74R

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74R
- Power - Max: 300mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
- Resistor - Base (R1): 2.2kOhms
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PBRN113EK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 1kOhms
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IMH20TR1G

TRANS PREBIAS 2NPN 15V SC74R

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74R
- Power - Max: 300mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
- Resistor - Base (R1): 2.2kOhms
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PBRN123EK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
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PBRN123YK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 10kOhms
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DTC363TKT146

TRANS PREBIAS NPN 200MW SMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 6.8 kOhms
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