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List Table
Found: 39
  • PDTC115ET,215
    TRANS PREBIAS NPN 250MW TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • PUMD24,115
    TRANS PREBIAS 1NPN 1PNP 6TSSOP
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: 6-TSSOP
    • Power - Max: 300mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTC115EETL
    TRANS PREBIAS NPN 150MW EMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: EMT3
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • PDTA115ET,215
    TRANS PREBIAS PNP 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTA114EEFRATL
    TRANS PREBIAS PNP 150MW EMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: EMT3
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTC115EMB,315
    PDTC115E - NPN RESISTOR-EQUIPPED
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006B-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 230MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • PDTA115EMB,315
    TRANS PREBIAS PNP 50V DFN1006B-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 3-XFDFN
    • Supplier Device Package: DFN1006B-3
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTC015EEBTL
    TRANS PREBIAS NPN 50V 0.15W SC89
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-89, SOT-490
    • Supplier Device Package: EMT3F (SOT-416FL)
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 5mA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • PDTA115EE,115
    SMALL SIGNAL BIPOLAR TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SC-75
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTA115EEBTL
    TRANS PREBIAS PNP 150MW EMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: EMT3
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • PDTC115EUF
    PDTC115EU/SOT323/SC-70
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SOT-323
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTA115EUAT106
    TRANS PREBIAS PNP 200MW UMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: UMT3
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTC115EKAT146
    TRANS PREBIAS NPN 200MW SMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTA115EETL
    TRANS PREBIAS PNP 150MW EMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: EMT3
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • DTA115EMT2L
    TRANS PREBIAS PNP 150MW VMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: VMT3
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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