Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 20mA | Transistors

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List Table

Found: 39

DTC015EMT2L

TRANS PREBIAS NPN 50V VMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 5mA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115EM,315

NOW NEXPERIA PDTC115EM - SMALL S

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006-3
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTA115EMB,315

NOW NEXPERIA PDTA115EMB - SMALL

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180MHz
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTA115EK,115

TRANS PREBIAS PNP 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115EEF,115

TRANS PREBIAS NPN 250MW SC89

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SC-89
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115ES,126

TRANS PREBIAS NPN 500MW TO92-3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 500mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PUMH24,115

TRANS PREBIAS 2NPN 50V 6TSSOP

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
- Power - Max: 300mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTA115ES,126

TRANS PREBIAS PNP 500MW TO92-3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 500mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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DTC115EMT2L

TRANS PREBIAS NPN 150MW VMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115EE,115

SMALL SIGNAL BIPOLAR TRANSISTOR

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTA115EE,115

TRANS PREBIAS PNP 150MW SC75

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PEMB24,115

TRANS PREBIAS 2PNP 50V SOT666

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
- Power - Max: 300mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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DTA015EMT2L

TRANS PREBIAS PNP 50V VMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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DTA115EKAT146

TRANS PREBIAS PNP 200MW SMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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PDTC115EE,115

TRANS PREBIAS NPN 150MW SC75

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
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Output by:

	Значение	Кол‑во
	6-TSSOP ⇒	3
	DFN1006-3 ⇒	1
	DFN1006B-3 ⇒	3
	EMT3 ⇒	4
	EMT3F (SOT-416FL) ⇒	2
	SC-75 ⇒	4
	SC-89 ⇒	1
	SMT3 ⇒	2
	SMT3; MPAK ⇒	2
	SOT-323 ⇒	3
	SOT-666 ⇒	2
	SOT-883 ⇒	2
	TO-236AB ⇒	2
	TO-92-3 ⇒	2
	UMT3 ⇒	2
	VMT3 ⇒	4

Supplier Device Package (16)