- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: Automotive, AEC-Q101, FRED Pt®
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 22ns
- Current - Reverse Leakage @ Vr: 2µA @ 100V
- Operating Temperature - Junction: -60°C ~ 175°C
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- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: eSMP®
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Current - Reverse Leakage @ Vr: 1µA @ 69.2V
- Tolerance: ±5%
- Power - Max: 1.25W
- Voltage - Zener (Nom) (Vz): 91V
- Impedance (Max) (Zzt): 250 Ohms
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMD3F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 70V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 100mA
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: onsemi
- Series: Automotive, AEC-Q101, NZ8F
- Mounting Type: Surface Mount, Wettable Flank
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: 2-XDFN
- Supplier Device Package: 2-X2DFNW (1x0.6)
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Current - Reverse Leakage @ Vr: 100nA @ 10V
- Tolerance: ±5%
- Power - Max: 250mW
- Voltage - Zener (Nom) (Vz): 13V
- Impedance (Max) (Zzt): 37 Ohms
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- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: 175°C (Max)
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 20A
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: QC Terminal
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
- Diode Type: Single Phase
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/117
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Current - Reverse Leakage @ Vr: 500nA @ 36V
- Tolerance: ±5%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 47V
- Impedance (Max) (Zzt): 105 Ohms
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 125°C (TJ)
- Package / Case: 4-Square, MB-35W
- Supplier Device Package: MB-35W
- Diode Type: Single Phase
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 7.5A
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Die
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
- Current - Reverse Leakage @ Vr: 10nA @ 69.16V
- Tolerance: ±5%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 91V
- Impedance (Max) (Zzt): 1200 Ohms
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- Offers in stock:
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- 100