- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Configuration
|
Technology
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBPC1506 | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-Square, GBPC | 600V | 15A | Single Phase | QC Terminal | GBPC | Standard | -65°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 7.5A | |||||||||||||||||||
| MURH10040R | DIODE GEN PURP 400V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 400V | 90ns | |||||||||||||||||||
| BAT5403WE6327HTSA1 | DIODE SCHOT 30V 200MA SOD323-2 | Infineon Technologies | SC-76, SOD-323 | 200mA (DC) | Schottky | Surface Mount | PG-SOD323-2 | Small Signal =< 200mA (Io), Any Speed | 2µA @ 25V | 10pF @ 1V, 1MHz | 800mV @ 100mA | 30V | 5ns | 150°C (Max) | |||||||||||||||||
| JANTX1N977BUR-1/TR | VOLTAGE REGULATOR | Microchip Technology | DO-204AH, DO-35, Axial | Through Hole | ±5% | DO-35 (DO-204AH) | -55°C ~ 175°C | 500mW | 47V | 105 Ohms | 500nA @ 36V | 1.1V @ 200mA | Military, MIL-PRF-19500/117 | ||||||||||||||||||
| CDS5518CUR-1 | VOLTAGE REGULATOR | Microchip Technology | |||||||||||||||||||||||||||||
| CD4134 | VOLTAGE REGULATOR | Microchip Technology | Die | Surface Mount | ±5% | Die | -65°C ~ 175°C | 500mW | 91V | 1200 Ohms | 10nA @ 69.16V | 1.5V @ 200mA | |||||||||||||||||||
| MB158W-BP | BRIDGE RECT 1P 800V 15A MB-35W | Micro Commercial Co | 4-Square, MB-35W | 800V | 15A | Single Phase | Through Hole | MB-35W | Standard | -55°C ~ 125°C (TJ) | 10µA @ 800V | 1.2V @ 7.5A | |||||||||||||||||||
| SZNZ8F13VMX2WT5G | 13V ZENER STANDARD TOLERANCE IN | onsemi | 2-XDFN | Surface Mount, Wettable Flank | ±5% | 2-X2DFNW (1x0.6) | -65°C ~ 150°C (TJ) | 250mW | 13V | 37 Ohms | 100nA @ 10V | 900mV @ 10mA | Automotive, AEC-Q101, NZ8F | ||||||||||||||||||
| HVC375BTRF-E | VARIABLE CAPACITANCE DIODE | Rochester Electronics, LLC | |||||||||||||||||||||||||||||
| DAP202UMTL | DIODE ARRAY GP 80V 100MA UMD3F | Rohm Semiconductor | SC-85 | Standard | Surface Mount | UMD3F | Small Signal =< 200mA (Io), Any Speed | 100nA @ 70V | 1.2V @ 100mA | 80V | 4ns | 150°C (Max) | 1 Pair Common Anode | 100mA | |||||||||||||||||
| 1SMA4763HR3G | DIODE ZENER 91V 1.25W DO214AC | Taiwan Semiconductor Corporation | DO-214AC, SMA | Surface Mount | ±5% | DO-214AC (SMA) | -55°C ~ 175°C (TJ) | 1.25W | 91V | 250 Ohms | 1µA @ 69.2V | Automotive, AEC-Q101 | |||||||||||||||||||
| GP10-4003-E3/54 | DIODE GEN PURP 200V 1A DO204AL | Vishay General Semiconductor - Diodes Division | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200V | ||||||||||||||||||||||
| VS-6ESH01HM3/86A | DIODE GEN PURP 100V 6A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 6A | Standard | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 940mV @ 6A | 100V | 22ns | -60°C ~ 175°C | Automotive, AEC-Q101, FRED Pt® | |||||||||||||||||
| ES1PD-M3/85A | DIODE GEN PURP 200V 1A DO220AA | Vishay General Semiconductor - Diodes Division | DO-220AA | 1A | Standard | Surface Mount | DO-220AA (SMP) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 200V | 10pF @ 4V, 1MHz | 920mV @ 1A | 200V | 25ns | -55°C ~ 150°C | eSMP® | ||||||||||||||||
| VS-43CTQ100GPBF | DIODE ARRAY SCHOTTKY 100V TO220 | Vishay General Semiconductor - Diodes Division | TO-220-3 | Schottky | Through Hole | TO-220-3 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 980mV @ 40A | 100V | 175°C (Max) | 1 Pair Common Cathode | 20A |
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