- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Configuration
|
Technology
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N3014RB | DIODE ZENER 180V 10W DO213AA | Microchip Technology | DO-203AA, DO-4, Stud | Chassis, Stud Mount | ±5% | DO-213AA | -65°C ~ 175°C | 10W | 180V | 260 Ohms | 10µA @ 136.8V | 1.5V @ 2A | |||||||||||||||||||
| 1N6635 | DIODE ZENER 4.3V 5W E AXIAL | Microchip Technology | E, Axial | Through Hole | ±5% | E, Axial | -65°C ~ 175°C | 5W | 4.3V | 500 Ohms | 25µA @ 1V | 1.5V @ 1A | |||||||||||||||||||
| JANTXV1N3912AR | RECTIFIER | Microchip Technology | DO-203AB, DO-5, Stud | 50A | Standard | Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1.4V @ 50A | 300V | 150ns | -65°C ~ 150°C | Military, MIL-PRF-19500/308 | ||||||||||||||||||
| 1N6081US | DIODE GEN PURP 150V 2A G-MELF | Microsemi Corporation | SQ-MELF, G | 2A | Standard | Surface Mount | G-MELF (D-5C) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 150V | 1.5V @ 37.7A | 150V | 30ns | -65°C ~ 155°C | ||||||||||||||||||
| 1N4762 G | DIODE ZENER 82V 1W DO204AL | Microsemi Corporation | DO-204AL, DO-41, Axial | Through Hole | ±10% | DO-204AL (DO-41) | -65°C ~ 175°C | 1W | 82V | 200 Ohms | 5µA @ 62.2V | 1.2V @ 200mA | |||||||||||||||||||
| BZV49-C68,115 | DIODE ZENER 68V 1W SOT89 | Nexperia USA Inc. | TO-243AA | Surface Mount | ±5% | SOT-89 | -65°C ~ 150°C | 1W | 68V | 240 Ohms | 50nA @ 47.6V | 1V @ 50mA | |||||||||||||||||||
| SZ1SMA5941BT3G | DIODE ZENER 47V 1.5W SMA | onsemi | DO-214AC, SMA | Surface Mount | ±5% | SMA | -65°C ~ 150°C | 1.5W | 47V | 67 Ohms | 500nA @ 35.8V | 1.5V @ 200mA | Automotive, AEC-Q101 | ||||||||||||||||||
| NRVUS360VBT3G | DIODE GEN PURP 600V 3A SMB | onsemi | DO-214AA, SMB | 3A | Standard | Surface Mount | SMB | Fast Recovery =< 500ns, > 200mA (Io) | 3µA @ 600V | 1.25V @ 3A | 600V | 75ns | -65°C ~ 175°C | Automotive, AEC-Q101 | |||||||||||||||||
| SBRD81035CTLT4G | DIODE SCHOTTKY 35V 10A DPAK | onsemi | TO-252-3, DPak (2 Leads + Tab), SC-63 | Schottky | Surface Mount | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 35V | 470mV @ 5A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 5A | ||||||||||||||||||
| 1SZ45A-AZ | DIODE ZENER 6.4V 0.25W | Renesas Electronics America Inc | |||||||||||||||||||||||||||||
| 1SMB5947HM4G | DIODE ZENER 82V 3W DO214AA | Taiwan Semiconductor Corporation | DO-214AA, SMB | Surface Mount | ±5% | DO-214AA (SMB) | -55°C ~ 150°C (TJ) | 3W | 82V | 160 Ohms | 1µA @ 62.2V | Automotive, AEC-Q101 | |||||||||||||||||||
| HER3004PT C0G | DIODE ARRAY GP 300V 30A TO247AD | Taiwan Semiconductor Corporation | TO-247-3 | Standard | Through Hole | TO-247AD (TO-3P) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 300V | 1V @ 15A | 300V | 50ns | -55°C ~ 150°C | 1 Pair Common Cathode | 30A | |||||||||||||||||
| BZD17C27P RVG | DIODE ZENER 27V 800MW SUB SMA | Taiwan Semiconductor Corporation | DO-219AB | Surface Mount | ±7.03% | Sub SMA | -55°C ~ 175°C (TJ) | 800mW | 27V | 15 Ohms | 1µA @ 20V | 1.2V @ 200mA | |||||||||||||||||||
| MBRB15H60CTHE3_A/P | DIODE ARRAY SCHOTTKY 60V TO263AB | Vishay General Semiconductor - Diodes Division | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Schottky | Surface Mount | TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 60V | 730mV @ 7.5A | 60V | -65°C ~ 175°C | 1 Pair Common Cathode | 7.5A | Automotive, AEC-Q101 | |||||||||||||||||
| BZX55A6V2-TAP | DIODE ZENER 6.2V 500MW DO35 | Vishay General Semiconductor - Diodes Division | DO-204AH, DO-35, Axial | Through Hole | ±1% | DO-35 (DO-204AH) | 175°C | 500mW | 6.2V | 10 Ohms | 100nA @ 2V | 1.5V @ 200mA | Automotive, AEC-Q101 |
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