- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Configuration
|
Technology
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ES1JWF-HF | RECTIFIER SUPER FAST RECOVERY 60 | Comchip Technology | SOD-123F | 1A | Standard | Surface Mount | SOD-123F | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 15pF @ 4V, 1MHz | 1.68 V @ 1 A | 600V | 35ns | -55°C ~ 150°C | |||||||||||||||||
| ES2AA-13 | DIODE GEN PURP 50V 2A SMA | Diodes Incorporated | DO-214AC, SMA | 2A | Standard | Surface Mount | SMA | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 25pF @ 4V, 1MHz | 920mV @ 2A | 50V | 25ns | -55°C ~ 150°C | |||||||||||||||||
| JAN1N965D-1 | DIODE ZENER 15V 500MW DO35 | Microchip Technology | DO-204AH, DO-35, Axial | Through Hole | ±1% | DO-35 (DO-204AH) | -65°C ~ 175°C | 500mW | 15V | 16 Ohms | 500nA @ 11V | 1.1V @ 200mA | Military, MIL-PRF-19500/117 | ||||||||||||||||||
| SS15-LTP | DIODE SCHOTTKY 50V 1A DO214AC | Micro Commercial Co | DO-214AC, SMA | 1A | Schottky | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 50V | 45pF @ 4V, 1MHz | 700mV @ 1A | 50V | -55°C ~ 150°C | ||||||||||||||||||
| APT100DL60HJ | BRIDGE RECT 1P 600V 100A SOT227 | Microsemi Corporation | SOT-227-4, miniBLOC | 600V | 100A | Single Phase | Chassis Mount | SOT-227 | Standard | -55°C ~ 175°C (TJ) | 250µA @ 600V | 2V @ 100A | |||||||||||||||||||
| SMBG5944B/TR13 | DIODE ZENER 62V 2W SMBG | Microsemi Corporation | DO-215AA, SMB Gull Wing | Surface Mount | ±5% | SMBG (DO-215AA) | -65°C ~ 150°C | 2W | 62V | 100 Ohms | 1µA @ 47.1V | 1.2V @ 200mA | |||||||||||||||||||
| JANTXV1N4571A-1 | DIODE ZENER 6.4V 500MW DO35 | Microsemi Corporation | DO-204AH, DO-35, Axial | Through Hole | ±5% | DO-35 (DO-204AH) | -65°C ~ 175°C | 500mW | 6.4V | 100 Ohms | 2µA @ 3V | Military, MIL-PRF-19500/452 | |||||||||||||||||||
| 1N456ATR | DIODE GEN PURP 30V 500MA DO35 | onsemi | DO-204AH, DO-35, Axial | 500mA | Standard | Through Hole | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 25nA @ 25V | 1V @ 100mA | 30V | 175°C (Max) | |||||||||||||||||||
| BAT64-06WH6327 | SCHOTTKY DIODE | Rochester Electronics, LLC | |||||||||||||||||||||||||||||
| BZD27C39P RVG | DIODE ZENER 39V 1W SUB SMA | Taiwan Semiconductor Corporation | DO-219AB | Surface Mount | ±5% | Sub SMA | -55°C ~ 175°C (TJ) | 1W | 39V | 40 Ohms | 1µA @ 30V | 1.2V @ 200mA | |||||||||||||||||||
| BZD27C22P | DIODE ZENER 22.05V 1W SUB SMA | Taiwan Semiconductor Corporation | DO-219AB | Surface Mount | ±5.66% | Sub SMA | -55°C ~ 175°C (TJ) | 1W | 22.05V | 15 Ohms | 1µA @ 16V | 1.2V @ 200mA | |||||||||||||||||||
| UJ3D1210K2 | 1200V 10A SIC SCHOTTKY DIODE G3, | UnitedSiC | TO-247-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 110µA @ 1200V | 510pF @ 1V, 1MHz | 1.6V @ 10A | 1200V | 0ns | -55°C ~ 175°C | |||||||||||||||||
| VBT3080C-E3/8W | DIODE SCHOTTKY 30A 80V TO-263AB | Vishay General Semiconductor - Diodes Division | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Schottky | Surface Mount | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 700µA @ 80V | 820mV @ 15A | 80V | -55°C ~ 150°C | 1 Pair Common Cathode | 15A | TMBS® | |||||||||||||||||
| BZX384C11-G3-08 | DIODE ZENER 11V 200MW SOD323 | Vishay General Semiconductor - Diodes Division | SC-76, SOD-323 | Surface Mount | ±5% | SOD-323 | -55°C ~ 150°C | 200mW | 11V | 20 Ohms | 100nA @ 8V | BZX384-G | |||||||||||||||||||
| GLL4752A-E3/97 | DIODE ZENER 33V 1W MELF | Vishay General Semiconductor - Diodes Division | DO-213AB, MELF | Surface Mount | ±5% | MELF DO-213AB | -65°C ~ 150°C | 1W | 33V | 45 Ohms | 5µA @ 25.1V |
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