- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Configuration
|
Technology
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5259B TR PBFREE | DIODE ZENER 39V 500MW DO35 | Central Semiconductor Corp | DO-204AH, DO-35, Axial | Through Hole | ±5% | DO-35 | -65°C ~ 200°C | 500mW | 39V | 80 Ohms | 100nA @ 30V | 1.1V @ 200mA | |||||||||||||||||||
| S1KFP | RECTIFIER DIODE, 1.2A, 800V | Fairchild Semiconductor | SOD-123H | 1.2A | Standard | Surface Mount | SOD-123HE | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 800V | 18pF @ 0V, 1MHz | 1.3V @ 1.2A | 800V | 1.5µs | -55°C ~ 150°C | Automotive, AEC-Q101 | ||||||||||||||||
| JAN1N4463D | DIODE ZENER 8.2V 1.5W DO41 | Microchip Technology | DO-204AL, DO-41, Axial | Through Hole | ±1% | DO-41 | -65°C ~ 175°C | 1.5W | 8.2V | 3 Ohms | 500nA @ 4.92V | 1V @ 200mA | Military, MIL-PRF-19500/406 | ||||||||||||||||||
| UPS115U/TR7 | DIODE SCHOTTKY 15V 1A POWERMITE | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite | Fast Recovery =< 500ns, > 200mA (Io) | 10mA @ 15V | 220mV @ 1A | 15V | -55°C ~ 150°C | |||||||||||||||||||
| 1N5272BUR-1 | ZENER DIODE | Microsemi Corporation | |||||||||||||||||||||||||||||
| JAN1N3029BUR-1 | DIODE ZENER 24V 1W DO213AB | Microsemi Corporation | DO-213AB, MELF (Glass) | Surface Mount | ±5% | DO-213AB (MELF, LL41) | -55°C ~ 175°C | 1W | 24V | 25 Ohms | 10µA @ 18.2V | 1.2V @ 200mA | Military, MIL-PRF-19500/115 | ||||||||||||||||||
| 1N4729APE3/TR12 | DIODE ZENER 3.6V 1W DO204AL | Microsemi Corporation | DO-204AL, DO-41, Axial | Through Hole | ±5% | DO-204AL (DO-41) | -65°C ~ 150°C | 1W | 3.6V | 10 Ohms | 100µA @ 1V | 1.2V @ 200mA | |||||||||||||||||||
| BZX84-C30,215 | NEXPERIA BZX84-C30 - ZENER DIODE | NXP Semiconductors | TO-236-3, SC-59, SOT-23-3 | Surface Mount | ±5% | TO-236AB | -65°C ~ 150°C | 250mW | 30V | 80 Ohms | 50nA @ 21V | 900mV @ 10mA | Automotive, AEC-Q101 | ||||||||||||||||||
| SZ3728.T2 | DIODE ZENER 28V 3W DIE | SMC Diode Solutions | Die | Surface Mount | ±5% | Die | -40°C ~ 165°C (TJ) | 3W | 28V | 24 Ohms | 1µA @ 21.4V | 1.1V @ 200mA | |||||||||||||||||||
| MBR30150CTHC0G | DIODE ARRAY SCHOTTKY 150V TO220 | Taiwan Semiconductor Corporation | TO-220-3 | Schottky | Through Hole | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 150V | 1.02V @ 30A | 150V | -55°C ~ 150°C | 1 Pair Common Cathode | 30A | Automotive, AEC-Q101 | |||||||||||||||||
| RSFJLHRVG | DIODE GEN PURP 600V 500MA SUBSMA | Taiwan Semiconductor Corporation | DO-219AB | 500mA | Standard | Surface Mount | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 4pF @ 4V, 1MHz | 1.3V @ 500mA | 600V | 250ns | -55°C ~ 150°C | Automotive, AEC-Q101 | ||||||||||||||||
| ES1ALHRQG | DIODE GEN PURP 50V 1A SUB SMA | Taiwan Semiconductor Corporation | DO-219AB | 1A | Standard | Surface Mount | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 10pF @ 4V, 1MHz | 950mV @ 1A | 50V | 35ns | -55°C ~ 150°C | Automotive, AEC-Q101 | ||||||||||||||||
| MUR160AHR1G | DIODE GEN PURP 600V 1A DO204AL | Taiwan Semiconductor Corporation | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 27pF @ 4V, 1MHz | 1.25V @ 1A | 600V | 50ns | -55°C ~ 175°C | Automotive, AEC-Q101 | ||||||||||||||||
| 1N4948GPHE3/54 | DIODE GEN PURP 1KV 1A DO204AL | Vishay General Semiconductor - Diodes Division | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1000V | 15pF @ 4V, 1MHz | 1.3V @ 1A | 1000V | 500ns | -65°C ~ 175°C | SUPERECTIFIER® | ||||||||||||||||
| BZX85B6V8-TAP | DIODE ZENER 6.8V 1.3W DO41 | Vishay General Semiconductor - Diodes Division | DO-204AL, DO-41, Axial | Through Hole | ±2% | DO-204AL (DO-41) | -55°C ~ 175°C | 1.3W | 6.8V | 3.5 Ohms | 1µA @ 4V | Automotive, AEC-Q101, BZX85 |
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