- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Configuration
|
Technology
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBPC2506W-G | BRIDGE RECT 1P 600V 25A GBPC-W | Comchip Technology | 4-Square, GBPC-W | 600V | 25A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 10µA @ 600V | 1.1V @ 12.5A | |||||||||||||||||||
| CDBD2060-G | DIODE ARRAY SCHOTTKY 60V D2PAK | Comchip Technology | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Schottky | Surface Mount | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 60V | 750mV @ 10A | 60V | -55°C ~ 150°C | 1 Pair Common Cathode | 20A (DC) | ||||||||||||||||||
| PDS5100H-13-36 | DIODE SCHOTTKY 100V 5A POWERDI5 | Diodes Incorporated | PowerDI™ 5 | 5A | Schottky | Surface Mount | PowerDI™ 5 | Fast Recovery =< 500ns, > 200mA (Io) | 3.5µA @ 100V | 800mV @ 10A | 100V | -65°C ~ 175°C | |||||||||||||||||||
| DFLS240LQ-7 | DIODE SCHOTTKY 40V 2A POWERDI123 | Diodes Incorporated | POWERDI®123 | 2A | Schottky | Surface Mount | PowerDI™ 123 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 20V | 90pF @ 10V, 1MHz | 650mV @ 3A | 40V | -55°C ~ 125°C | Automotive, AEC-Q101 | |||||||||||||||||
| JANTX1N4994US | DIODE ZENER 330V 5W D5B | Microchip Technology | E-MELF | Surface Mount | ±5% | D-5B | -65°C ~ 175°C | 5W | 330V | 1.175 kOhms | 2µA @ 251V | 1.5V @ 1A | Military, MIL-PRF-19500/356 | ||||||||||||||||||
| JANS1N6316US | DIODE ZENER 4.7V 500MW MELF | Microchip Technology | SQ-MELF, B | Surface Mount | ±5% | B, SQ-MELF | -65°C ~ 175°C | 500mW | 4.7V | 17 Ohms | 5µA @ 1.5V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | ||||||||||||||||||
| JAN1N5528B-1 | DIODE ZENER 8.2V 500MW DO35 | Microsemi Corporation | DO-204AH, DO-35, Axial | Through Hole | ±5% | DO-35 (DO-204AH) | -65°C ~ 175°C | 500mW | 8.2V | 40 Ohms | 500nA @ 7.5V | 1.1V @ 200mA | Military, MIL-PRF-19500/437 | ||||||||||||||||||
| 1PS301/ZL115 | RECTIFIER DIODE | Nexperia USA Inc. | |||||||||||||||||||||||||||||
| BZX884-C18,315 | NEXPERIA BZX884-C18 - ZENER DIOD | NXP Semiconductors | SOD-882 | Surface Mount | ±5% | DFN1006-2 | -65°C ~ 150°C | 250mW | 18V | 45 Ohms | 50nA @ 12.6V | 900mV @ 10mA | |||||||||||||||||||
| MMBZ5241AW_R1_00001 | SURFACE MOUNT SILICON ZENER DIOD | Panjit International Inc. | SC-70, SOT-323 | Surface Mount | ±2% | SOT-323 | -55°C ~ 150°C (TJ) | 200mW | 11V | 22 Ohms | 2µA @ 8.4V | ||||||||||||||||||||
| RD24F-T8-AZ | DIODE ZENER | Renesas Electronics America Inc | |||||||||||||||||||||||||||||
| UF4002-E3/54 | DIODE GEN PURP 100V 1A DO204AL | Vishay General Semiconductor - Diodes Division | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 100V | 17pF @ 4V, 1MHz | 1V @ 1A | 100V | 50ns | -55°C ~ 150°C | |||||||||||||||||
| UH2CHE3_A/I | DIODE GEN PURP 150V 2A DO214AA | Vishay General Semiconductor - Diodes Division | DO-214AA, SMB | 2A | Standard | Surface Mount | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 150V | 42pF @ 4V, 1MHz | 1.05V @ 2A | 150V | 25ns | -55°C ~ 175°C | Automotive, AEC-Q101 | ||||||||||||||||
| BZG05B4V7-HM3-08 | DIODE ZENER 4.7V 1.25W DO214AC | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | Surface Mount | ±1.91% | DO-214AC (SMA) | 150°C (TJ) | 1.25W | 4.7V | 13 Ohms | 3µA @ 1V | 1.2V @ 200mA | Automotive, AEC-Q101, BZG05B-M | ||||||||||||||||||
| GP08D-E3/54 | DIODE GEN PURP 200V 800MA DO204 | Vishay General Semiconductor - Diodes Division | DO-204AL, DO-41, Axial | 800mA | Standard | Through Hole | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 200V | 1.3V @ 800mA | 200V | 2µs | -65°C ~ 175°C | SUPERECTIFIER® |
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