• Manufacturer
  • Current - Average Rectified (Io)
Found: 69821
  • DIODE GEN PURP 800V 650A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AA, A-PUK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 650A
    • Voltage - Forward (Vf) (Max) @ If: 950mV @ 450A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 20mA @ 800V
    • Operating Temperature - Junction: -40°C ~ 180°C
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  • SCHOTTKY BARRIER DIODE
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
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  • DIODE SCHOTTKY 200V 5A SMC
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AB, SMC
    • Supplier Device Package: SMC
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 5A
    • Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 50µA @ 200V
    • Operating Temperature - Junction: -60°C ~ 175°C
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  • DIODE
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 150mA
    • Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 50 nA @ 40 V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • HYPERFAST RECTIFIER DIODE
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
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  • DIODE GEN PURP 50V 16A ITO220AC
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: ITO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 16A
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 10µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE GEN PURP 400V 1A DO41
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 5µA @ 400V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE GEN PURP 600V 150A TO244
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 25µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • DIODE SCHOTTKY 50V 2A SMB
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AA, SMB
    • Supplier Device Package: SMB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 2A
    • Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 50V
    • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE ARRAY SBR 40V 20A TO220AB
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: SBR®
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Diode Type: Super Barrier
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Voltage - Forward (Vf) (Max) @ If: 530mV @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 500µA @ 40V
    • Operating Temperature - Junction: -65°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 20A
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  • DIODE GP 2KV 3600A POWRDISC
    Powerex Inc.
    • Manufacturer: Powerex Inc.
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AD
    • Supplier Device Package: Pow-R-Disc
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2000V
    • Current - Average Rectified (Io): 3600A
    • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 22µs
    • Current - Reverse Leakage @ Vr: 200mA @ 2000V
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  • DIODE GEN PURP 800V 1A SUB SMA
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Surface Mount
    • Package / Case: DO-219AB
    • Supplier Device Package: Sub SMA
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 1.8µs
    • Current - Reverse Leakage @ Vr: 5µA @ 800V
    • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE SCHOTTKY 40V 15A D2PAK
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AB (D²PAK)
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 15A
    • Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1.75mA @ 40V
    • Capacitance @ Vr, F: 900pF @ 5V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE MODULE 1.2KV 200A D2
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 9mA @ 1200V
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 200A
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  • DIODE GEN PURP 600V TO220FP
    Renesas Electronics America
    • Manufacturer: Renesas Electronics America
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP-2L
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 20A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 3V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 25ns
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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