Found: 37
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
NXPSC10650X6Q DIODE SCHOTTKY 650V 10A TO220F WeEn Semiconductors TO-220-2 Full Pack, Isolated Tab 10A Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 250µA @ 650V 300pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C (Max)
NXPSC10650XQ DIODE SCHOTTKY 650V 10A TO220F WeEn Semiconductors TO-220-2 Full Pack, Isolated Tab 10A Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 250µA @ 650V 300pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C (Max)
WNSC101200CWQ SILICON CARBIDE POWER DIODE WeEn Semiconductors TO-247-3 10A Silicon Carbide Schottky Through Hole TO-247-3 No Recovery Time > 500mA (Io) 50µA @ 1200V 250pF @ 1V, 1MHz 1.6V @ 5A 1200V 0ns 175°C (Max)
NXPSC106506Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors TO-220-2 10A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 250µA @ 650V 300pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C (Max)
BYV10-600PQ DIODE GEN PURP 600V 10A TO220AC WeEn Semiconductors TO-220-2 10A Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 2V @ 10A 600V 50ns 175°C (Max)
BYC10D-600,127 DIODE GEN PURP 500V 10A TO220AC WeEn Semiconductors TO-220-2 10A Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 200µA @ 600V 2.5V @ 10A 500V 18ns 150°C (Max)
BYC10-600PQ DIODE GEN PURP 600V 10A TO220AC WeEn Semiconductors TO-220-2 10A Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 1.8V @ 10A 600V 19ns 150°C (Max)