-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXPSC10650X6Q | DIODE SCHOTTKY 650V 10A TO220F | WeEn Semiconductors | TO-220-2 Full Pack, Isolated Tab | 10A | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 250µA @ 650V | 300pF @ 1V, 1MHz | 1.7V @ 10A | 650V | 0ns | 175°C (Max) |
| NXPSC10650XQ | DIODE SCHOTTKY 650V 10A TO220F | WeEn Semiconductors | TO-220-2 Full Pack, Isolated Tab | 10A | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 250µA @ 650V | 300pF @ 1V, 1MHz | 1.7V @ 10A | 650V | 0ns | 175°C (Max) |
| WNSC101200CWQ | SILICON CARBIDE POWER DIODE | WeEn Semiconductors | TO-247-3 | 10A | Silicon Carbide Schottky | Through Hole | TO-247-3 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 250pF @ 1V, 1MHz | 1.6V @ 5A | 1200V | 0ns | 175°C (Max) |
| NXPSC106506Q | DIODE SCHOTTKY 650V 10A TO220AC | WeEn Semiconductors | TO-220-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 250µA @ 650V | 300pF @ 1V, 1MHz | 1.7V @ 10A | 650V | 0ns | 175°C (Max) |
| BYV10-600PQ | DIODE GEN PURP 600V 10A TO220AC | WeEn Semiconductors | TO-220-2 | 10A | Standard | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 600V | 2V @ 10A | 600V | 50ns | 175°C (Max) | |
| BYC10D-600,127 | DIODE GEN PURP 500V 10A TO220AC | WeEn Semiconductors | TO-220-2 | 10A | Standard | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 200µA @ 600V | 2.5V @ 10A | 500V | 18ns | 150°C (Max) | |
| BYC10-600PQ | DIODE GEN PURP 600V 10A TO220AC | WeEn Semiconductors | TO-220-2 | 10A | Standard | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1.8V @ 10A | 600V | 19ns | 150°C (Max) |
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