-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
V10P45HM3_A/I | DIODE SCHOTTKY 45V 10A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 10A (DC) | Schottky | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 800µA @ 45V | 570mV @ 10A | 45V | -40°C ~ 150°C | Automotive, AEC-Q101, eSMP®, TMBS® | ||
VBT1045BP-E3/4W | DIODE SCHOTTKY 45V 10A TO263AB | Vishay General Semiconductor - Diodes Division | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Schottky | Surface Mount | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 45V | 680mV @ 10A | 45V | 200°C (Max) | TMBS® | ||
VBT1045BP-E3/8W | DIODE SCHOTTKY 45V 10A TO263AB | Vishay General Semiconductor - Diodes Division | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Schottky | Surface Mount | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 45V | 680mV @ 10A | 45V | 200°C (Max) | TMBS® | ||
VS-C10ET07T-M3 | DIODE SCHOTTKY 650V 10A TO220AC | Vishay General Semiconductor - Diodes Division | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 55 µA @ 650 V | 430pF @ 1V, 1MHz | 1.8V @ 10A | 650V | -55°C ~ 175°C | ||
VBT1045BP-M3/8W | DIODE SCHOTTKY 10A 45V TO-263AB | Vishay General Semiconductor - Diodes Division | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Schottky | Surface Mount | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 45V | 680mV @ 10A | 45V | -40°C ~ 150°C | |||
VS-C20CP07L-M3 | DIODE SCHOTTKY 650V 10A TO220AC | Vishay General Semiconductor - Diodes Division | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 55 µA @ 650 V | 430pF @ 1V, 1MHz | 1.8V @ 10A | 650V | -55°C ~ 175°C | ||
VBT1045BP-M3/4W | DIODE SCHOTTKY 10A 45V TO-263AB | Vishay General Semiconductor - Diodes Division | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Schottky | Surface Mount | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 45V | 680mV @ 10A | 45V | 10ns | -40°C ~ 150°C | ||
V10P45HM3_A/H | DIODE SCHOTTKY 45V 10A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 10A (DC) | Schottky | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 800µA @ 45V | 570mV @ 10A | 45V | -40°C ~ 150°C | Automotive, AEC-Q101, eSMP®, TMBS® | ||
VFT1045BP-M3/4W | DIODE SCHOTTKY 45V 10A ITO220AC | Vishay General Semiconductor - Diodes Division | TO-220-2 Full Pack, Isolated Tab | 10A (DC) | Schottky | Through Hole | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 45V | 680mV @ 10A | 45V | 200°C (Max) | TMBS® | ||
VT1045BP-M3/4W | DIODE SCHOTTKY 45V 10A TO220AC | Vishay General Semiconductor - Diodes Division | TO-220-2 | 10A (DC) | Schottky | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 45V | 680mV @ 10A | 45V | 200°C (Max) | TMBS® |
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