Semiconductors, Diodes, Diodes - Rectifiers - Arrays Toshiba Semiconductor and Storage 100mA

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 38
  • DSF01S30SL,L3F
    DIODE SCHOTTKY 30V 100MA SL2
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 2-SMD, No Lead
    • Supplier Device Package: SL2
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 50µA @ 30V
    • Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • DSF01S30SC,L3F
    DIODE SCHOTTKY 30V 100MA SC2
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 0201 (0603 Metric)
    • Supplier Device Package: SC2
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 50µA @ 30V
    • Capacitance @ Vr, F: 9.3pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • DSR01S30SC,L3F
    DIODE SCHOTTKY 30V 100MA SC2
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 0201 (0603 Metric)
    • Supplier Device Package: SC2
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 700µA @ 30V
    • Capacitance @ Vr, F: 8.2pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS307E,L3F
    DIODE GEN PURP 80V 100MA SC79
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: SC-79
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 10nA @ 80V
    • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • 1SS397TE85LF
    DIODE GEN PURP 400V 100MA SC70
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 1µA @ 400V
    • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS394TE85LF
    DIODE SCHOTTKY 10V 100MA SC59
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 10V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 20µA @ 10V
    • Capacitance @ Vr, F: 40pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS307(TE85L,F)
    DIODE GEN PURP 30V 100MA SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 10µA @ 30V
    • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS417,L3M
    DIODE SCHOTTKY 40V 100MA FSC
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 2-SMD, Flat Lead
    • Supplier Device Package: fSC
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 620mV @ 50mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 5µA @ 40V
    • Capacitance @ Vr, F: 15pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS389,H3F
    DIODE SCHOTTKY 40V 100MA ESC
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: ESC
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 5µA @ 10V
    • Capacitance @ Vr, F: 25pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • CES388,L3F
    DIODE SCHOTTKY 40V 100MA ESC
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: ESC
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 5µA @ 40V
    • Capacitance @ Vr, F: 25pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS389,L3F
    DIODE SCHOTTKY 10V 100MA ESC
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: ESC
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 10V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 20µA @ 10V
    • Capacitance @ Vr, F: 40pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS387,L3F
    DIODE GEN PURP 80V 100MA ESC
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: ESC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 500nA @ 80V
    • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS370TE85LF
    DIODE GEN PURP 200V 100MA SC70
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 1µA @ 200V
    • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS196(TE85L,F)
    DIODE GEN PURP 80V 100MA SC59-3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59-3
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 500nA @ 80V
    • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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  • 1SS367,H3F
    DIODE SCHOTTKY 10V 100MA SC76
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-76, SOD-323
    • Supplier Device Package: USC
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 10V
    • Current - Average Rectified (Io): 100mA
    • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 20µA @ 10V
    • Capacitance @ Vr, F: 40pF @ 0V, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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