Semiconductors, Diodes, Diodes - Rectifiers - Arrays SemiQ 10A

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Found: 9

GP2D010A065C

DIODE SCHOTTKY 650V 10A TO252

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 650V
- Capacitance @ Vr, F: 527pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP2D010A120B

DIODE SCHOTTKY 1.2KV 10A TO247-2

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Capacitance @ Vr, F: 635pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP2D010A170B

DIODE SCHOTTKY 1.7KV 10A TO247-2

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1700V
- Capacitance @ Vr, F: 812pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP2D010A120A

DIODE SCHOTTKY 1.2KV 10A TO220-2

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Capacitance @ Vr, F: 635pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP3D010A120A

SIC SCHOTTKY DIODE 1200V TO220

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Capacitance @ Vr, F: 608pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP2D010A065A

DIODE SCHOTTKY 650V 10A TO220-2

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 650V
- Capacitance @ Vr, F: 527pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP3D010A065A

SIC SCHOTTKY DIODE 650V TO220

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 25µA @ 650V
- Capacitance @ Vr, F: 419pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP3D010A120B

SIC SCHOTTKY DIODE 1200V TO247-2

SemiQ
- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Capacitance @ Vr, F: 608pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GP3D010A065D

SIC SCHOTTKY DIODE 650V TO263-2L

SemiQ
- Manufacturer: SemiQ
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A
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