-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RJU60C3SDPD-E0#J2 | DIODE GEN PURP 600V 10A TO252 | Renesas Electronics America | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A | Standard | Surface Mount | TO-252 | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 2.1V @ 30A | 600V | 90ns | 150°C (Max) |
RJU4351SDPE-00#J3 | DIODE GEN PURP 430V 10A LDPAK | Renesas Electronics America | SC-83 | 10A | Standard | Surface Mount | 4-LDPAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 430V | 1.9V @ 10A | 430V | 25ns | -55°C ~ 150°C |
RJU60C3TDPP-AJ#T2 | DIODE GEN PURP 600V TO220FP | Renesas Electronics America | TO-220-2 Full Pack | 10A | Standard | Through Hole | TO-220FP-2L | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 2.1V @ 30A | 600V | 90ns | 150°C (Max) |
RJU60C3TDPP-EJ#T2 | DIODE GEN PURP 600V 10A TO220FP | Renesas Electronics America | TO-220-2 Full Pack | 10A | Standard | Through Hole | TO-220FP-2L | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 2.1V @ 30A | 600V | 90ns | 150°C (Max) |
RJU4351TDPP-EJ#T2 | DIODE GP 430V 10A TO220FP-2L | Renesas Electronics America | TO-220-2 Full Pack | 10A | Standard | Through Hole | TO-220FP-2L | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 430V | 1.9V @ 10A | 430V | 25ns | -55°C ~ 150°C |
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