Found: 3
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650V 20A SIC SBD
onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2FS
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A (DC)
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 650V
- Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Offers in stock:
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SIC DIODE 650V
onsemi
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 866pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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SIC DIODE 650V 40A
onsemi
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 866pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market
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- Offers in stock: