Semiconductors, Diodes, Diodes - Rectifiers - Arrays onsemi 11.6A (DC)

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 3
  • FFSD0865B-F085
    650V 8A SIC SBD GEN1.5
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-PAK (TO-252)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Capacitance @ Vr, F: 336pF @ 1V, 100kHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • FFSD0865B
    650V 8A SIC SBD GEN1.5
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-PAK (TO-252)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Capacitance @ Vr, F: 336pF @ 1V, 100kHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • FFSM0865B
    SILICON CARBIDE DIODE 650V 8A PQ
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: 4-PowerTSFN
    • Supplier Device Package: 4-PQFN (8x8)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Capacitance @ Vr, F: 336pF @ 1V, 100kHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • 50
  • 100