-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FFSP10120A | DIODE SCHOTTKY 1.2KV 10A TO220-2 | onsemi | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2L | Fast Recovery =< 500ns, > 200mA (Io) | 200µA @ 1200V | 612pF @ 1V, 100kHz | 1.75V @ 10A | 1200V | -55°C ~ 175°C | ||
| FFSPF1065A | 650V 10A SIC SBD | onsemi | TO-220-2 Full Pack | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F-2FS | No Recovery Time > 500mA (Io) | 200µA @ 650V | 575pF @ 1V, 100kHz | 650V | 0ns | -55°C ~ 175°C | ||
| FFSP2065BDN-F085 | SIC DIODE 650V 20A | onsemi | TO-220-3 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-3 | No Recovery Time > 500mA (Io) | 40µA @ 650V | 421pF @ 1V, 100kHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | Automotive, AEC-Q101 |
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