-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DLA11C-TR-E | DIODE GEN PURP 200V 1.1A 2SMD | onsemi | 2-SMD, J-Lead | 1.1A | Standard | Surface Mount | SMD | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 200V | 980mV @ 1.1A | 200V | 50ns | 150°C (Max) |
| SB11-04HP-TR-E | DIODE SCHOTTKY 40V 1.1A 2SMD | onsemi | 2-SMD, J-Lead | 1.1A | Schottky | Surface Mount | SMD | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 550mV @ 1.1A | 40V | 125°C (Max) |
- 10
- 15
- 50
- 100