-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BY359-1500,127 | DIODE GEN PURP 1.5KV 10A TO220AC | NXP USA Inc. | TO-220-2 | 10A (DC) | Standard | Through Hole | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | 100µA @ 1300V | 1.8V @ 20A | 1500V | 600ns | 150°C (Max) |
| BY359X-1500,127 | DIODE GEN PURP 1.5KV 10A TO220F | NXP USA Inc. | TO-220-2 Full Pack | 10A (DC) | Standard | Through Hole | TO-220FP | Standard Recovery >500ns, > 200mA (Io) | 100µA @ 1300V | 1.8V @ 20A | 1500V | 600ns | 150°C (Max) |
| BY459X-1500S,127 | DIODE GEN PURP 1.5KV 10A TO220F | NXP USA Inc. | TO-220-2 Full Pack | 10A (DC) | Standard | Through Hole | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 250µA @ 1300V | 1.35V @ 6.5A | 1500V | 220ns | 150°C (Max) |
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