-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMEG45U10EPDAZ | NEXPERIA PMEG45U10EPD - 45V, 10A | NXP Semiconductors | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | CFP15 | Fast Recovery =< 500ns, > 200mA (Io) | 20mA @ 10V | 1170pF @ 1V, 1MHz | 490mV @ 10A | 45V | 16ns | -55°C ~ 150°C |
- 10
- 15
- 50
- 100