-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAS16QAZ | DIODE GP 100V 290MA DFN1010D-3 | Nexperia USA Inc. | 3-XDFN Exposed Pad | 290mA (DC) | Standard | Surface Mount | DFN1010D-3 | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 80V | 1.5pF @ 0V, 1MHz | 1.25V @ 150mA | 100V | 4ns | 150°C (Max) | Automotive, AEC-Q101, BAS16 |
- 10
- 15
- 50
- 100