- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CPT400100 | DIODE MODULE 100V 200A 2TOWER | Microsemi Corporation | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 100V | 890mV @ 200A | 100V | 1 Pair Common Cathode | 200A | |||||
| R2540 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| R25160 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| JANTXV1N5711UR-1 | DIODE SCHOTTKY 50V 33MA DO213AA | Microsemi Corporation | DO-213AA | 33mA | Schottky | Surface Mount | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 2pF @ 0V, 1MHz | 410mV @ 1mA | 50V | -65°C ~ 150°C | Military, MIL-PRF-19500/444 | |||
| UPS5817E3/TR7 | DIODE SCHOTTKY 20V 1A POWERMITE1 | Microsemi Corporation | DO-216AA | 1A | Schottky | Surface Mount | Powermite 1 (DO216-AA) | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 450mV @ 1A | 20V | -55°C ~ 150°C | |||||
| APTDF400AK170G | DIODE MODULE 1.7KV 480A SP6 | Microsemi Corporation | LP4 | Standard | Chassis Mount | SP6 | Standard Recovery >500ns, > 200mA (Io) | 750µA @ 1700V | 2.5V @ 400A | 1700V | 572ns | 1 Pair Series Connection | 480A | ||||
| 1N3910AR | FAST RECOVERY RECTIFIER | Microsemi Corporation | |||||||||||||||
| APT15D120KG | DIODE GEN PURP 1.2KV 15A TO220 | Microsemi Corporation | TO-220-3 | 15A | Standard | Through Hole | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 250µA @ 1200V | 2.5V @ 15A | 1200V | 260ns | -55°C ~ 175°C | ||||
| APT60DQ100BG | DIODE GEN PURP 1KV 60A TO247 | Microsemi Corporation | TO-247-2 | 60A | Standard | Through Hole | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 1000V | 3V @ 60A | 1000V | 255ns | -55°C ~ 175°C | ||||
| HS18145 | DIODE SCHOTTKY 45V 180A HALFPAK | Microsemi Corporation | HALF-PAK | 180A | Schottky | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 45V | 7500pF @ 5V, 1MHz | 700mV @ 180A | 45V | |||||
| JANTXV1N6391 | DIODE SCHOTTKY 45V 22.5A DO203AA | Microsemi Corporation | DO-203AA, DO-4, Stud | 22.5A | Schottky | Chassis, Stud Mount | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 45V | 2000pF @ 5V, 1MHz | 680mV @ 50A | 45V | -55°C ~ 175°C | Military, MIL-PRF-19500/553 | |||
| JANTXV1N1206AR | DIODE GEN PURP 600V 12A DO203AA | Microsemi Corporation | DO-203AA, DO-4, Stud | 12A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-203AA (DO-4) | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 600V | 1.35V @ 38A | 600V | -65°C ~ 150°C | Military, MIL-PRF-19500/260 | ||||
| LSM835G/TR13 | DIODE SCHOTTKY 35V 8A DO215AB | Microsemi Corporation | DO-215AB, SMC Gull Wing | 8A | Schottky | Surface Mount | DO-215AB | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 35V | 520mV @ 8A | 35V | -55°C ~ 150°C | |||||
| S3540 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| APT30D100BCTG | DIODE ARRAY GP 1000V 30A TO247 | Microsemi Corporation | TO-247-3 | Standard | Through Hole | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 250µA @ 1000V | 2.3V @ 30A | 1000V | 290ns | -55°C ~ 175°C | 1 Pair Common Cathode | 30A |
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